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Transistor characteristics experiment lab report

No make up labs will be given. A transistor is an example of a device of this kind. 1k0 2k2. Having a good grasp of the physics of the BJT is key to understanding its operation and applications. 2. 2) Measurements will be carried out to obtain: 1. e. 4. Determine the BJT small-signal parameters: input resistance rπ, output resistance r0 and transconductance gm. Measurement of Transistor Current . This transistor amplifies it in the usual way and uses it to drive the second larger “output” transistors. Objectives 1) The effect of bias on BJT small signal parameters will be analyzed. Now you will put that knowledge to use. Date of Book: Lab experiment related theory available in following books:. Familiarity with MOSFET, the most used type of transistor today and its comparison with BJT. Aim 1. 1k resistor (x 1) 3. Lab Report Experiment 3 (c) to Verify Maximum Power Transfer Theorem Laboratory Report JFET Transistor Characteristics Expt. Therefore, in this experiment, we will discuss the design of AM modulator by using a signal transistor and balanced modulator. EXPERIMENT # 8 TRANSISTOR BIASING TECHNICS Transistor Biasing In the last two labs the concept of biasing was introduced i. Haileselassie and Kou Vue 11/14/2013 ELC ENG 330 – Electronics I Fall 201 2. Familiarity with basic characteristics and parameters of the J-FET. By considering the transistor configuration circuits to be analogous to two-port networks, they can be analyzed using the characteristic-curves which can be of the following types characteristics. Helpful links for this experiment, including required reading, can be found on the links page for this course. 1) Plot the two V-I  In the preceding experiment, you learnt to plot the I-V characteristics of a p-n junction and a Zener diode. The three important characteristics of a transistor in any mode are (i) input characteristics (ii) output characteristics and (iii) transfer characterstics. Complete the pre-lab, BEFORE coming to lab. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS 1. 0 Objective In this lab, you will determine the IC - VCE characteristics of a BJT in several regions of ENGR 130 Lab #6 1 Laboratory Experiment #6: Biasing Bipolar Junction Transistors I. Measure the properties of a MOSFET being used as a switch. Goals and Objectives: The goal of this laboratory is to study electronics through experimentation. b) Circuit symbol (note the   To study the characteristics of a common n-p-n (or p-n-p) transistor and to find Students will be able to do the experiment, once they understand the procedure. Applications of J-FET as a current source and a variable resistor. But when transistor goes into the saturation region the transistor acts as a closed switch and current completes the path. We will then plot it to get the depen-dence. 5" floppy disk to lab with you, so you can save your data and plot it out for your lab report. I. INTRODUCTION In this lab, we will introduce and study the properties of a few circuit blocks commonly used to build operational amplifiers. 3- Filling all tables and answering all questions in the report. From this graph you will be able to determine the output resistor ro and the channel length modulation parameter λ. CRO THEORY IGBT combines the advantages of BJT and MOSFET. Laboratory Experiment 2 - BJT Linear Amplifier 1. Dual channel Oscilloscope 3. The characteristics found in the them suitable to be used in amplifiers. Its unannotated LaTeX source code is article_example. Physics 623 Transistor Characteristics and Single Transistor Ampli er Sept. the transfer of an input signal from a low resistance circuit to a high resistance Lab report field effect transistor experiment Published on Nov 6, 2008 Imperial college London, material science and engineering,first year lab report copies Lab 7 – INDUCTORS AND LR CIRCUITS The power which electricity of tension possesses of causing an opposite electrical state in its vicinity has been expressed by the general term Induction . BACKGROUND The MOS (metal-oxide- semiconductor) transistor (or MOSFET) is the basic building block (2) NPN (2N3904, 2N2219, or equivalent general purpose transistor) RESUME OF THEORY The common-emitter (CE) transistor amplifier configuration is widely used. Academia. txt) or read online for free. The word transistor is derived from the words “Transfer” and “Resistor” it describes the operation of a BJT i. Transistor Characteristics¶. Since a Bipolar Junction Transistor is a 3-terminal device, there are three different configurations of Transistors possible with BJTs. OBJECTIVES. Michael Faraday OBJECTIVES • To explore the effect of the interaction between a magnetic field and a coil of wire (an inductor). b) INSULATED GATE BIPOLAR TRANSISTOR (IGBT) AIM To study the switching characteristics of IGBT and to determine the timing parameters. In particular, you measured the amplification parameter b=Ic ’Ib (b is also known as hfe on your digital multimeter. 4 Introduction AB02 is a compact, ready to use Transistor Characteristics experiment board. SWS This activity uses the ‘Output’ feature of the ScienceWorkshop 750 interface to provide the output voltage. edu. Dynamic output resistance 3. docx), PDF File (. cir from the Lab 5 page. 3/30/16 Lab 6: Single-stage transistor ampli fiers . g. In a transistor EE 420L Engineering Electronics II - Lab 6. For that we set the quiescent point need to be set with the circuitry external to the transistor, the values of resistors Rc and Rb, and the DC voltage sources, Vcc and Vbb, have chosen accordingly. The transistor has a half-cylinder shape with one flat side. Field effect Transistors- Single stage common source FET amplifier-plot of gain in dB Vs Transistors • Transistors are the heart of modern electronics (replaced vacuum tubes) voltage and current amplifier circuits high frequency switching (computers) impedance matching low power small size, can pack thousands of transistors in mm2 • In this class we will only consider bipolar transistors. 1 of 6 Experiment 9 Bipolar Junction Transistor Characteristics W. Laboratory Report - Each experiment shall be described by a laboratory report CHARACTERISTICS OF THE JUNCTION FIELD EFFECT TRANSISTOR OBJECTIVES: To become familiar with the theory of operation of Junction Field Effect Transistors (JFET) and to examine the V-I characteristics of the JFET. You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set the base current on a specific value, and then varied V CE between 0 and 10 V in 1 V increments Experiment No 2: BJT Characteristics Theory The transistor is a two junction, three terminal semiconductor device which has three regions namely the emitter region, the base region, and the collector region. electronics help Jan 16, 2016 · Experiment : COMMON EMITTER TRANSISTOR CHARACTERISTICS | EduRev Notes notes for Class 12 is made by best teachers who have written some of the best books of Class 12. Lab Report. The 2- or 3-digit number following the letter "N" is a serialized identification number. Note: Be sure to answer the questions on the report as you proceed through this lab. Madhavan Page 5 of 21 EE348L, Spring 2005 7 Experiment #7: Introduction to the Bipolar Junction Transistor 7. Construct the circuit of Fig. = 330 Ω, R 1 R 2 =10 kΩ, Transistor = N-channel logic level MOSFET (PSMN022-30PL) , V 1 = 5 V Remove a resistor without damaging the board or part with either desoldering method. Dynamic input resistance 2. AB02 Scientech Technologies Pvt. They are due at the beginning of each lab. Recall that in Lab 3 we measured the I-V curve for a PN junction by manually varying a The Zener diode specially made to have a reverse voltage breakdown at a specific voltage. . The characteristics found in the Rittersdorf Lab 4 - Geiger-Mueller Counting ionized gas particle is twice the magnitude of the work function. 1 Transistor Test Circuit • The capacitor is provided to ensure that the circuit is stable and has no Bart Van Zeghbroeck - 01/11/10 - LAB experiments ECEN4375 - page 3 Report questions: READ THIS BEFORE THE LAB AS WELL AS BEFORE LEAVING THE LAB TO ENSURE THAT YOU HAVE ALL DATA NEEDED TO COMPLETE THE REPORT The lab report consist of a brief summary, describing the experiment, its goal and purpose and the key results and conclusions. Experiment 1 Circuits Experiment Board Experiment 2 Lights in Circuits Experiment 3 Ohm’s Law Experiment 4 Resistances in Circuits Experiment 5 Voltages in Circuits Experiment 6 Currents in Circuits EEC-451 ELECTRONICS ENGINEERING LAB II 1. Purpose: The purpose of this laboratory is to become familiar with the D. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of offset, range, … on C1,C2,M1,M2,M3,M4 as necessary. Common emitter current gain COMPONENTS AND EQUIPMENTS NEEDED 1. It has high impedance gate like MOSFET and low on-state conduction losses like BJT. Power electronic trainer 2. The aim of the following experiment is to explain in detail to every student which will attempt to do such an experiment what is the component called Field Effect Transistor or FET in shot and which are its features and significant parameters/characteristics. No. Transistor as a switch. 22u capacitor (x 1) 5. For the tested transistor, plot its characteristics and then plot straight lines Laboratory Experiment : CE BJT V-I Characteristics ? the BE junction behaves as transistor, it is not a regular diode!!! base-emitter voltage instead of the base current when measuring EE105 Lab Experiments Experiment 3: Bipolar Junction Transistor Characterization 1 Objective The BJT was invented in 1948 by William Shockley at Bell Labs, and became the first mass-produced transistor. Here we will describe the system characteristics of the BJT ECE 202 – Soldering Lab Figure 8. Preface: • Preliminary. Use the following outline to draft your lab report: Start by reading the pre-lab and lab instructions in the EE 248 Lab Manual. Measurement of operational amplifier parameters- Common Mode Gain, Differential Mode Gain, CMRR, Slew Rate. To use the base current gain ( ), and load line analysis to predict and experimentally to verify the DC operating point (often called the \Q point") for your transistor in the 2N2222 (Transistor), 7414 (Schmitt Trigger), 7404 (Inverter), LED, & the usual components. Draw the I - V characteristics curve of diode from the reading Figure 5. CSUS College of Engineering and Computer Science Department of Electrical & Electronic Engineering EEE 102L Analog/Digital Electronics Laboratory OBJECTIVES AND GOALS OF THE LABORATORY The laboratory for this course has two major objectives: 1) To acquaint you with virtual Bipolar Transistor Basics In the . EXPERIMENT 7:Observation of characteristics of a Zener diode Debangshu Mukherjee BS. This is a significant issue that needs to be addressed as the free electron can drift into the anode and trigger another Jan 23, 2015 · NPN Transistor Examples. report score and post-lab report score will be dropped in computing final  Read 13 answers by scientists with 2 recommendations from their colleagues to the question I tried doing the CE BJT VI characteristics in the laboratory. Ammeters CIRCUIT DIAGRAM THEORY A transistor is a 3 terminal device. Component/ Equipment required: Component Equipment Sl. So Frequency Response of Transistor Amplifiers Overview This lab will continue our exploration of single-transistor amplifiers using BJTs. NPN and PNP Transistors, Transistors Biasing, Q point stabilization and Electronic Engineering Analog Electronics Lab Report 3 Student Name: Sanzhar During the experiment, we tried to increase the temperature by connecting power to  In this lab, transistor current-voltage (I-V) characteristics of Common Emitter (CE) circuit will be investigated. Build a common . Typically, students practice by working through lots of sample problems and checking their answers against those provided by the textbook or the instructor. analyze the Drain and transfer characteristics of FET in Common Source configuration. To determine the To plot the characteristics curve of PN junction diode in Forward & Reverse bias. When held so the flat side of the transistor faces you and the wire leads point down, the left lead Field Effect Transistor Characterization EE251 Laboratory Report #3 <name> May 26, 2008 Abstract The low frequency characteristics of the 2N7000 N channel MOS Transistor were measured and compared to published data for this transistor and the characterization of the transistor in PSpice using the published data. The data you take today will be EXPERIMENT 7 BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS 1. Leung, and R. It can be considered as the combination of two diodes. Transistor common emitter circuit configuration . Lab Experiment: 3 Objectives: To understand the Transistor's characteristics. 00). 2- Output graph of each experiment. 6. In this experiment: the student will be able to understand the basic characteristics of JFETs the student will be able to put JFET in comparison with BJT according to the graph of the result PROCEDURE OF THE EXPERIMENT Materials: Analog trainer Analog B. 2 Materials You will need the components listed in Table 1. TTL FAMILY The logic family refers to the general physical realization of a logical element, such as the TTL, The transistor used in this lab is the 2N4401, an NPN de-vice. T. NO. Equipment: EE223 Electronics Kit, with these components in Transistor packages are mainly standardized, but the assignment of a transistor's functions to the terminals is not: other transistor types can assign other functions to the package's terminals. IGBT module 2. 1. Exploring linear characteristics and switching behavior of the transistors. 77475, about $4. Diode. circuit using the BJT, namely, the current mirror. The data will then be compared to equivalent models available in PSpice. “The field-effect transistor (FET) is a transistor that The Theory: A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. 1M resistor (x 1) 4. Observe the effect of bias on BJT small signal parameters. edu is a platform for academics to share research papers. It is strongly recommended that you read and understand the section on BJT physics before beginning this experiment. to set the output operating point at the DC voltage so that the amplified wave can Dec 03, 2016 · To study the characteristics of a common emitter npn (or pnp) transistor and to find out the values of current and voltage gains Physics Lab ManualNCERT Solutions Class 12 Physics Sample Papers Aim To study the characteristics of a common emitter npn (or pnp) transistor and to find out the values of current and voltage … Physics 323 Experiment # 6 - Transistor Characteristics Purpose You will take several sets of data in order to plot the diode-like input characteristic of a bipolar junction transistor and the controlled current-source-like output characteristic in what is known as the “common emitter” configuration. In breakdown the voltage across the Zener diode is close to constant over a wide range of currents thus making it useful as a shunt voltage regulator. When input is high, the transistor is turned on and works in saturation region. Assume the transistor is in saturation and find The figure shows that the bias vs gain common emitter amplifier transistor characteristics, if the R2 resistor increases then there is an increase in the forward bias and R1 & bias are inversely proportional to each other. 0 Objective In this lab, you will determine the IC - VCE characteristics of a BJT in several regions of Report The report from the laboratory exercise should contain: DC Characteristics of the tested transistor (REMARK: gather the characteristic on one graph). Have your lab data sheet checked off by your TA before submitting the lab report. Insert the 2N3904 transistor into the socket on the AC/DC Electronics Lab circuit board. Determine hybrid parameters for a chosen operating point. Two of the basic uses of a transistor, which will be explored in this experiment, are as an amplifier and as a switch. applications such as an amplifier, a switch, a buffer, an oscillator, a nonlinear. 1 to display the iD-vDS Experiment 2: Discrete BJT Op-Amps (Part I) This is a three-week laboratory. Warning: Because diodes of the same type can have significantly different characteristics, use the same diode for all experiments in this lab. pdf is a minimal example of something that looks a little like a lab report. Simple FET circuits: J-FET as a current source and a variable resistor. Pre-Lab Learning to mathematically analyze circuits requires much study and practice. The objective of this lab is to analyze the characteristics of Transistor. ) Ic is the current out of the collector of the transistor and Ib is the current out of the transistor base for PNP transistors. To experimentally evaluate the threshold voltage of a MOSFET. V. Remove the Power Amplifier Icon In the Experiment Setup window, click the Power Amplifier icon and press <delete> on the keyboard. 1 ABSTRACT The purpose of this experiment is to understand and measure the electrical properties of TTL (Transistor-Transistor Logic) and CMOS (Complementary Metal Oxide Semiconductor) logic circuits and compare your results to the manufacturers' specifications. 30 May 2019 Transistor Characteristics are the plots which represent the relationships between the current and the voltages of a transistor in a particular  Report received Date: … To understand the input and output characteristic of BJT. CIRCUITS LABORATORY EXPERIMENT 10 DIGITAL LOGIC CIRCUITS 10. docx from ELEC 11134 at University of Kelaniya. 1. The second transistor amplifies the signal again resulting in a very high current gain. Apparatus 1. pdf), Text File (. Diodes Overview Diodes are mostly used in practice for emitting light (as Light Emitting Diodes, LEDs) or controlling voltages in various circuits. To graphically find the operating point of a MOSFET circuit. There are two basic types of bipolar transistor construction, PNP and NPN, which basically describes the physical arrangement of the P-type and N-type semiconductor materials from which they are Apr 26, 2019 · In this transistor tutorial, we will learn about Different Configurations of Transistors. It provides large voltage gain (typically tens to hundreds) and provides moderate input and output impedance. Fig. Lab 1: Field Effect Transistor; The J-FET OBJECTIVES. Even for the same transistor type the terminal assignment can vary (normally indicated by a suffix letter to the part number, q. Characteristics of Transistor (i) These are two pn junctions. C (0 – 5V) (0 – 100V) One from each 4 Ammeter D. If you need to use your diode on another day, mark it with a piece of tape with your name and leave it in the storage cubbies in the back of the lab. Electronic Devices and Circuits Lab; While performing the experiment do not exceed the ratings of the transistor. Temperature and collector current both affect beta, not to mention the normal inconsistencies during the manufacture of the transistor. Experiment: Transistor Circuit Design. Transistor Characteristics Lab Introduction Transistors are the active component in various devices like amplifiers and oscillators. Aim To study In common-emitter circuit of a transistor, emitter-base make input section and emitter- collector make output section. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. 2-Oscilloscope ,A. These graphs are called 'output characteristics' of the transistor. Learn about Transistor Characteristics like Input, Output, Current carrying characteristic, for Common emitter, common base, and common collector transistors. Two DC  WER Enterprises - offering Analog Transistor Characteristics Apparatus, For will all components, regulated power supply, meters etc. You are required to write only one lab report for all parts of this experiment. The author recommends assigning PART I, II, and III for the first three hours of lab with PART IV and V for the last three hours. This portion of the lab manual is also available on the web. Diodes: Experiment Guide Components required for this lab: 1. Table of Contents Pre-lab Preparation 2 JUNCTION TRANSISTOR : COMMON EMITTER CHARACTERISTICS RAVITEJ UPPU 1. tex. 2 INTRODUCTION Lab VIII: Bipolar Junction Transistor Characteristics – Page 8 6. with gate tied to the drain, from which we can determine threshold voltage. EXPERIMENT No: 03 Investigation of Transistor Characteristics of n-p-n and  Two of the basic uses of a transistor, which will be explored in this experiment, are as Figure 1: a) Schematics of the pnp transistor. LAB VII. ) Fig 1. In this lab, we will first measure the I-V characteristics of MOSFETs, including: Ids-Vgs in a saturation by connection configuration, e. 2N2222) and are called the "transistor characteristics". 7k answer views. ECE-342 Lab 5: BJT Amplifier This sample report from the 2007 ECE-342 Lab 5 assignment is meant to serve as a guide for lab reports for ECE-342 and ECE-343 Sample Lab Report Don Hummels, Someone Else September 9, 2011 Abstract Required Section: Very short description of what is in this report. 14. (To identify the leads of this potentiometer correctly, use an ohmmeter. Connect NPN common emitter transistor circuit to determine experimentally and plot the family of collector( V CE (potential between the collector and emitter ends of transistor) vs I c (collector current)) characteristic curves for the Common Emitter configuration. Bipolar transistors have 3 leads: between the two inputs, allowing us to assume linear operation to a good approximation. Lab Objectives: To obtain the output characteristics (I C vs. OPTIONAL: BS107 N-CHANNEL TRANSISTOR CHARACTERISTICS EXPERIMENT ON ANALOG DISCOVERY Revise the above method to obtain an IV characteristic of the n-channel MOSFET BS107. In your lab report discuss the operation of these circuits. A common base and a common collector amplifier will be designed and tested. Conclusion In this experiment, we learned what a common emitter amplifier is and how it works. The circuit to study the characteristic curves of NPN transistor in common emitter mode is as shown in Fig. is the . Lab 9. the aim of experiments topic one and two is to. The Bipolar Junction Transistor (BJT) is an extremely common electronic device. C. May 30, 2019 · Transistor Characteristics are the plots which represent the relationships between the current and the voltages of a transistor in a particular configuration. C (0 – 50mA) 1 2. 9 DESIGN AND CHARACTERISTICS OF COMMON BASE AND COMMON COLLECTOR AMPLIFIERS 1. To become acquainted to CD4007 MOS transistor array. 1 of 6 Experiment 6 Bipolar Junction Transistor Characteristics W. calculate the parameters transconductance (g m), drain resistance (r d) and amplification a transistor (which may be considered as made up of two diodes); and 3 designates a tetrode (a four-element transistor). A double-gate MOSFET was first demonstrated in 1984 by Electrotechnical Laboratory researchers Toshihiro Sekigawa and  1 Jul 2011 Experiment #5 – Bipolar Junction Transistor Characteristics . LAB 10: THE TRANSISTOR COMPARISON OF TWO BASIC TYPES: MOS AND BIPOLAR OBJECTIVES. One of the main characteristics of Darlington Transistors is their high current gains compared to single bipolar transistors. I B = I C /β = (4*10-3)/100 =40uA. nevada. The data sheet provides information on these characteristics. Laboratory Report JFET Transistor Characteristics Lab Report Experiment 3 (c) to Verify Maximum Power Transfer Theorem Expt. Read Transistor books like 110 Semiconductor Projects for the Home Constructor and Diode, Transistor & Fet Circuits Manual for free with a free 30-day trial experiment. Figure 2. Common emitter transistor amplifier characteristics summary The test relies on the fact that a bipolar transistor can be considered to comprise of two back to back diodes, and by performing the diode test between the base and collector and the base and emitter of the transistor using an analogue multimeter, most of the basic integrity of the transistor can be ascertained. That said the NPN variety is more commonly used because of the more widespread us of NPN transistors. VCE characteristics of the 2N3904 transistor. Result: Drain and Transfer characteristics of a FET are studied. For a three-hour lab that meets once a week, this experiment would be a two-week lab. Objectives 1. inverting input and the non-inverting. ¾ To provide an understanding of the meaning and importance of OPERATING POINT and LOAD LINE. Lab Notebook, and it can be written by any one member of purpose of this experiment is to provide an understanding of some of the characteristics of the transistor-transistor logic (TTL) family and Complementary Metal Oxide Semiconductor logic (CMOS) family. A transistor is a semiconductor device used to amplify or switch electronic signals and electrical The first report of a floating-gate MOSFET was made by Dawon Kahng and Simon Sze in 1967. The first format (standard lab report format) is most frequently used for EE laboratory experiments, which have multiple sections with different procedures and objectives. Bipolar Junction Transistors (BJT) General configuration and definitions The transistor is the main building block “element” of electronics. b) Run the simulation and print out the family of i D-v DS characteristics of the MOSFET. 6. 3. Experiment 3: Bipolar Junction Transistor Characterization 1 Objective The BJT was invented in 1948 by William Shockley at Bell Labs, and became the first mass-produced tran-sistor. 0. 4 { MOSFETs Electronics I Equipment Required: Power supply, function generator, multimeter, oscilloscope, solderless bread-board, various resistors, MOSFETs, and hookup wire. To perform measurements on your devices, and determine SPICE simulation parame-ters. 67  3 Dec 2016 Physics Lab ManualNCERT Solutions Class 12 Physics Sample Papers. APPARATUS REQUIRED 1. V CE) of a NPN transistor To calculate some of the transistor’s parameters from the measurements taken; To wire a common-emitter amplifier and check that it behaves as we have discussed in lectures in its quiescent state. The experiment examines the properties of an npn- transistor on the basis of its Questions for the Lab Report. Jul 18, 2017 · Transistor Characteristics Experiment for VTU Students. Draw a circuit for measurements of characteristics of a depletion mode, n-channel JFET, described in part 1 of the Laboratory (below). Ometer . Pre-lab calculations Analyze the DC circuit below. Ltd. , is it in CE Mode, CB Mode or CC Mode. The objectives of this experiment include the following: The Junction Field Effect Transistor (JFET) is perhaps the simplest transistor available. Of particular importance is the document on Electronic Switching (the topic of this experiment). 1µF BC107. A A. B. model line with the values obtained based on the results of the Experiment 1. 2008 1 Aim of experiment In this experiment, we try to observe the relation between the voltage and corressponding current generated. Lab. PRELAB. 2: Core type transistor and shell type transistor For the two primary types of transistor, core type transistor is comparatively simpler than the shell type transistor. Introduction a) Download nmoschar. Sep 15, 2015 · Need to report the video? P 18 draw characterstics curve of pnp transistor in cb ce configuration P-N Junction diode Characteristics Experiment Edunovus Online Smart Practicals Field Effect Transistor Experiment Abstract The characteristics of a Field Effect Transistor (FET) would be measured by this experiment. (Wave Rectifier & Clipper Circuit) Week 5: Submission of Lab Report for Experiment 1 & 2 7&8 Experiment No. 8, 1997 1 Purpose To measure and understand the common emitter transistor characteristic curves. Discover the best Transistor books and audiobooks. Measurement of Operational Amplifier Parameters-Common Mode Gain, Differential Mode Gain, CMRR, Slew Rate. See EE 248 Expt 7. In this circuit, a square wave input is applied. circuit – so forth. LABORATORY MANUAL Name of the Experiment : I-V Characteristics of diode. You stare at it, knowing the power it contains and what it has done for the world. Same as given in Experiment 8. Here you will use your transistor to amplify some spikes. Electronics Laboratory. Prelabs: Prelabs are designed to help you understand the lab experiment. Also there is no View Lab Report - Lab Report 4. (The hours will be announced on the class website. to all forms of electronic circuits. In this experiment we will be exploring and measuring the properties of a bipolar transistor on the basis of different characteristics. The purpose of this experiment is to measure the voltage-current characteristics of a germanium diode and the way in which these characteristics vary with temperature. V. 6 shows the circuit that will be used in this part of the LAB 7 MOSFET CHARACTERISTICS AND APPLICATIONS Objective In this experiment you will study the i-v characteristics of an MOS transistor. 5 (BJT Biasing Circuits) Week 9: Submission of Lab Report for Experiment 4 10 Experiment No. In this lab, op amps are used in two different configurations: inverting and non-inverting. By this buzzer start blowing. DC Regulated Power supply (0 - 30 V) 2 (One) No. 4 (BJT Characteristics & Common-Emitter Transistor Amplifier) Week 7: Submission of Lab Report for Experiment 3 9 Experiment No. An npn transistor has an n type emitter, a p type base and an n type collector while a pnp transistor Experiment No. A diode permits current to pass through it in only. CONTENTS First Cycle Experiments Exp. OVERVIEW You need to first identify the physical structure and orientation of BJT based on visual observation. Nov 25, 2013 · Bipolar Junction Transistor Characterstics Experiment - #8 Kehali B. APPARATUS REQUIRED: S. ELEC 2210 EXPERIMENT 7 . The of your transistor will probably be somewhere in the 200 — 600 range. Outcomes: Students are able to. how to find transistor base emitter collector with multimeter? how to check pnp and npn? electronics - Duration: 12:08. Objective: The objective of this experiment is to explore the basic applications of the bipolar junction transistor (BJT). The lab experiment should be completed within six hours, not including a laboratory report. Draw a circuit for measurements of characteristics of a depletion mode, n-channel JFET, described in part 1 of the Laboratory Experiment (5) MOSFET IV Characteristics Objectives To study the IV curve of a MOSFET. It is composed of semiconductor material with at least three terminals for connection to an external circuit. Y. The working principle of a MOSFET amplifier is controlling the current flowing through drain terminal by setting the gate-to-source voltage. The common emitter configuration is equally applicable to both NPN and PNP transistor variants. The static power is consumed so that the input signals may be amplified. Well, you need to be more specific about your question. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. The Digital Volt Meter (DVM) on the "diode" range DESIGN LAB EEC -451: Electronics Engineering II Lab Objective: To understand the digital logic and create various systems by using these logics. P49 Transistor Lab 2 P49_TRN2. Output Characteristic of Transistor. vi to measure the I C report for common emitter expirement Experiment 6 Transistors as amplifiers and switches Our final topic of the term is an introduction to the transistor as a discrete circuit element. 3 : (a) Input Characteristic, (b) Output Characteristic of NPN transistor. 0V-15V +5V. Lab Report 5: Bipolar Junction Transistor (BJT) Characteristics Contents that should be delivered for every report: 1- Netlist code for each experiment showing all components, models and control statements. ) You hand in lab reports in a box in the lab that is marked "EN162 Lab Reports," and they will be graded by a TA under guidelines I set. This is useful for students to plot different characteristics of NPN transistor in common EXPERIMENT 3: CHARACTERISTICS OF FIELD EFFECT TRANSISTOR AIM: To obtain the Drain and Transfer (V-I) characteristics of FET and to plot the characteristics. 2 - Diode Clipper and Clamper Circuits -Experiment 1: Diode Characteristics 1 - Experiment 2: Rectifiers and Filters 9 - Experiment 3: Clippers, Clampers and Voltage Regulator 16 transistor characteristics. The letter "N" following the first number indicates a semiconductor. From these measurements, it will be possible to obtain a value for the energy gap in germanium and an order of magnitude estimate of Boltzmann’s constant. exercises are to be done and submitted individually and turned in . Applications of OP-amp- OP-amp as summer amplifier, difference amplifier, integrator and differentiator. C power supply . These experiments can be used in combination with existing labs that the teacher em-ploys, or may be used as a complete lab unit. THEORY The acronym ‘FET’ stands for field effect transistor. Lab #8: Transistor basics of the transistor a few simple circuits No lab report, just excel spreadsheet   25 Nov 2013 Bipolar Junction Transistor Characterstics Experiment - #8 Kehali B. So these approximations are a moderately good place to start in the absence of any better information. 10M resistor (x 1) I. We also learned how different biased circuits compare and the different uses and formats for a common emitter amplifier. Yeung, W. Experiment No. Calculate the base current of a bipolar NPN transistor having the bias voltage 10V and the input base resistance of 200kΩ. 2 Shell Type Transistor Feature The conceptual graphs of core type transistor and shell type transistor obtained from the lecture slides are presented below. Learn from Transistor experts like R M MARSTON and R M MARSTON. Edit the file to update the NMOS model parameters KP and VTO in the . Experiment 1 Below are schematics for NMOS and PMOS source followers amplifiers (also known as common-drain amplifiers). ecte212: topic two transistors are common circuit elements that are commonly used to switch current on and off. 1N4148 diode (x 1) 2. JFET Characteristics and Biasing Lab N-Channel junction field effect transistor characteristics laboratory experiment using the 2N5457 through 2N5459 series general purpose JFET. operation of the bipolar junction transistor (BJT), and a basic D. The test The beta for a transistor is not always constant. While this is good, there is a much better way. Measure the i v characteristics of a small-signal MOSFET. You will learn 1. Calculate the base current IB to switch a resistive load of 4mA of a Bipolar NPN transistor which having the current gain (β) value 100. Howe UC Berkeley EE 105 Fall 2003 1. This line will be verified in the next part of the experiment by using the laboratory's curve tracer. Temperature and device parameter variation effects will be examined and biasing circuits that minimize these effects will be used in the experiment. AIM To plot the characteristics of BC 107 transistor and to find 1. monahan@unv. Make a copy of the prelab so that you can refer to it during the experiment! Lab Reports: Each student will write a Lab Report for each experiment. 3 - Offset Adder Functionality I There does not have to be a lab instructor there for you to work, but such assistance will be available eighteen or so hours per week. 11. 1 Introduction Transistors are at the heart of integrated circuit design. the transistor, resulting in a change in collector current The current gain of the transistor is the reason the current carrying capability of the phototransistor in generally much larger than that of the photodiode alone the transistor, resulting in a change in collector current The current gain of the transistor is the reason the current carrying capability of the phototransistor in generally much larger than that of the photodiode alone Laboratory Exercise No. FIELD EFFECT TRANSISTOR; THE J-FET . Field Effect Transistor Characterization EE251 Laboratory Report #3 <name> May 26, 2008 Abstract The low frequency characteristics of the 2N7000 N channel MOS Transistor were measured and compared to published data for this transistor and the characterization of the transistor in PSpice using the published data. Eric Monahan. Variable power supplies 3. Resistors 4. INTRODUCTION The transistor type (NPN or PNP) can be determined using a multimeter. 12 Field Effect Transistor (FET) OBJECT: To investigate the FET characteristics . Familiarize students with MOSFET characteristics Learn how to properly bias a MOSFET transistor Pre-lab / lab reading Course Textbook Oscilloscope User’s Guides (Copies of these reference books are available in the lab, or at the website) BS170, BS250 & 2N7000 Transistor Data Sheets Read the pre-lab introduction below article_example. EXPERIMENT NUMBER 5 Characterization and Use of Bipolar Junction Transistors . 2 - Diode Clipper and Clamper Circuits lab data (for example, Roaring Spring No. Understanding these different configurations of transistors will help you in better implementation of your application. The bias ranges for the cut-off, forward active and saturation modes will be identified. The proper- It finds application in virtually all electronic devices from radios to computers. Object: To examine the output characteristic of transistor. 0. The word Transistor is a combination of the two words Trans fer Var istor which describes their mode of operation way back in their early days of electronics development. CE configuration: Transistor is said to be in common emitter configuration if the emitter of the Input characteristic: The curve plotted between base current Ib and the Updated Sep 8, 2018 · Author has 356 answers and 704. The socket has three holes labeled “E” (emitter), “B” (base) and “C” (collector). The transistor's emitter is common to both the input and output circuits, hence the term common emitter Attach theoretical and Pspice results with the report. They are called active devices since transistors are capable of amplifying (or making larger) signals. The BJT is made by P and N type semiconductor material, which should be ELEC 3509 Electronics II Lab 1 Part 1: Diode‐Like behavior of BJT Junctions, and BJT Type Experiment: Using an ohmmeter on the "diode" range, measure the forward and reverse "resistances" of the B‐E and B‐ junctions of a 2N3904 transistor, shown in Fig. It works in three different regions: Active, Cutoff and Saturation according to applied biasing condition. Transfer characteristics are plots which are drawn between current and voltages of transistor in given configuration A transistor can be analyzed by characteristics curve which are as follows 1. NAME OF THE EQUIPMENT TYPE RANGE QUANTITY (NO. Two AVO meter 4. Demonstrating extremely high dc impedance of the MOSFET gate. The previous module was devoted to measuring the characteristics of a transistor. We will explore the frequency response of some simple BJT amplifiers, and examine the factors affecting the low- and high-frequency cutoff frequencies in these amplifiers. - All grading is based upon the laboratory report (explained below) - Each report is due no later than one week after the accompanying experiment is performed . The nature of the output characteristics of a npn BJT depends upon the biasing configuration of the transistor, i. The students will use the curve tracer and the scanned-load-line methods to obtain the I-V characteristic of the BJTs and compare the characteristics measured on the curve tracer. Bipolar Junction Transistor (BJT) 1. Apparatus: 1. C. 4. Voltmeters 5. 6 experiment 8: diode characteristics and circuits 5/9/06 In this experiment we will measure the I vs V characteristics of Si, Ge, and Zener p-n junction diodes, and investigate the use of diodes in a variety of circuits, including DC power supplies. To determine the frequency response of transistor in CE mode. 7. Here  Demonstrate the operation and characteristics of the small signal CE amplifier. The SB-FET (Schottky-barrier field-effect transistor) is a field-effect transistor with metallic source and drain contact electrodes, which create Schottky barriers at both the source-channel and drain-channel interfaces. Report what you have explored and observed with clear explanation the characteristic of an n-MOSFET. 11. measure its input and output IV-characteristics. This example might make for a good lab report template. Name Quantity Name Quantity 1 Transistor-npn BC 107 1(One) No. It is a semiconductor device and it comes in two general types: the Bipolar Junction Transistor (BJT) and the Field Effect Transistor (FET). Enough in-formation so that a reader can assess Lab 11: Bipolar Junction Transistor 1. S) 1 FET BFW10/11 1 2 Resistor 1 kΩ 2 3 Voltmeter D. The Bipolar Junction Transistor (BJT) Objectives: The experiments in this laboratory exercise will provide an introduction to BJT. Spring Wire (top Frequency Response of a Common-Emitter BJT Amplifier your experiment with your TA. 7: Bipolar Junction Transistor (BJT). Then, to invoke a transistor MXXX, we use a statement of the type MXXXDGSBour_nMOSFET W=Wval L=Lval where D, G, S,andB are the drain, gate, source, and body terminals, in that specific order, and Wval and Lval are the values of Wn and L n. Since an integrated circuit is constructed primarily from dozens to even millions of transistors formed from a single, thin silicon crystal, it might be interesting and instructive to supply for transistor bias current, and/or voltage, to operate in the desired operating region. The experiment will expand on and verify theoretical concepts presented in the lecture course Analog and Semiconductor Devices through the use of bench top device Lab:#1 MOS Transistors I-V characteristics and Model Parameter Extraction March 3, 2017 The objectives of the rst lab are: 1. 0 OBJECTIVES To become familiar with the theory of operation of bipolar junction transistors (BJT) and to examine the V-I characteristics of BJT’s 2. tutorials we saw that simple diodes are made up from two pieces of semiconductor material, either silicon or germanium to form a simple PN-junction and we also learnt about their properties and characteristics. at the beginning of class • Laboratory hardware exercises are to be done in groups • The . You have the transistor in your hand. With the inverting configuration shown below in Figure 2, the input voltage is connected to the. OBJECTIVES The common-emitter terminal characteristics of a Bipolar Junction Transistors (BJTs) will be determined experimentally using a commercial transistor curve tracer. You will need to choose the format to use in writing your report. electronics circuit, the multiplier is constructed by the non linear characteristics of active component. This lab is designed to examine the characteristics of the single-stage bipolar junction transistor amplifier. The GFET is a highly sensitive graphene-based field effect transistor used as biosensors and chemical sensors. As we will go through the topic, we will know about the transistor, mainly Bipolar Junction Transistor or BJT. Circuit designers use the small-signal model of transistor for analysis that are appropriate for the bias condition of that transistor. The following PSpice code uses the circuit of Fig. Objectives Characterize single Bipolar Junction Transistor (BJT), i. Problem 3. EXPERIMENT I. You will use the MOSFET as a variable resistor and as a switch. Fig 4. May 26, 2015 · When the transistor operated in the cut off region means its acting as a open switch and the buzzer doesn’t blow in this case. 6 Circuit Used to Obtain Characteristic Curves. c Physics,1st Year Chennai Mathematical Institute 7. Transistor 2. Introduction. Its LaTeX source code, annotated with lots of comments, is annotated_article_example. You can use a LED instead of buzzer with Experiment No. This module is devoted this is readily available in the lab and the 2N2222 is ok with this voltage. Applications of Op-amp- Op-amp as summing amplifier, Difference amplifier, Experiment 16 Diodes Lab – Part 2 Experiment 17 Transistor Lab 1 Experiment 18 Transistor Lab 2 Experiment 19 Transistor Lab 3 Experiment 20 Induction, Magnet and Coil Additional Equipment needed: Please refer to the Equipment Needed section in the beginning of each experiment for a listing of all equip-ment requirements. Physics 3330 Experiment #7 Fall 1999 Transistor Amplifiers Purpose The aim of this  in one direction only. 2 ID - vDS characteristics and determination of the output resistance ro and λ The objective of the following experiment is to measure the output characteristics of the NMOS transistor: iD-vDS with vGS as a parameter. DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGG. Howe UC Berkeley EE 105 Fall 2005 1. BC212L and BC212K). It can be used for a number of useful. There are also maximum power ratings to consider. Transistor is a three terminal, bipolar, current controlled device. Remove the Power Amplifier in the Experiment Setup window. Experiment 2: BJT input  13 Aug 2008 Input characteristics of a transistor is a curve showing the variation of The experiment is repeated for various constant values of VCE and  1kΩ resistor Lab VIII: Bipolar Junction Transistor Characteristics Page 1 Store the I C -V CE characteristic data AND curve image for your lab report. You can now explain with confidence what p-doping, n-doping, and depletion layers mean. OBJECTIVE In this lab, you will study the DC characteristics of a Bipolar Junction Transistor (BJT). You the will use the Bit Bucket breadboarding system to build and test several DC transistor circuits. APPARATUS: 1-D. LAB REPORT Type a lab report with a cover sheet containing your title, name, your lab partner’s name, class, section number, date the lab was performed and the date the report is due. No Title of the Experiment Page No 1 Static Characteristics of Silicon Controlled Rectifier 02 2 Static Characteristics of IGBT 08 3 Static Characteristics of MOSFET 12 4 SCR triggering circuit using Synchronized UJT Relaxation Oscillator 16 5 Common Collector Amplifier or Emitter Follower Circuit. to perform experiment. Integrated circuits typically contain millions of transistors, formed on a single tiny chip of silicon. doc / . To obtain the I-V characteristics of both P type and N type devices. The department’s faculty prefer one of the two formats outlined and explained near the end of this document. In output characteristics of Transistor when LAB 5: BJT I-V CHARACTERISTICS LEARNING OUTCOME Students identify the current-control terminal of a three-terminal active device (Bipolar Junction Transistor – BJT). You will find it helpful to bring one 3. Then, you will use the LabView program BJT_ivcurve. Properly identify the Source, Drain and Gate terminals of the transistor. Characteristics of an NPN transistor in common emitter configuration . Report : 1. There are two types of transistors. Experiment In this experiment you will characterize the behaviour of a MOSFET transistor by measuring drain current, I D, under various V G and V DS conditions, and you will compare the results observed against values provided from manufacturer data sheets. In the report, include a labeled printout of the characteristics of zero for the lab and any associated reports. 1 ABSTRACT In this experiment, the output I-V characteristic curves, the small-signal low frequency equivalent circuit parameters, and the switching times are determined for one of the commonly used transistors: a bipolar junction transistor. 2 Apparatus required a)A If you look at your transistor's characteristic curves you should see that, although does depend upon , over most of the measured range it is around 0·6 Volts or so. In particular, MOSFET (metal-oxide-semiconductor field-effect transistor) is a widely used three terminal device. Two DC power supply Introduction A thyristor is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions. Upon completion of Experiment No: 2 Common Emitter Configuration Characteristics Objective: To study the input and output characteristics of a transistor (Common Emitter configuration). The lowest pre-lab report score and post-lab report score will be dropped in computing final averages. BJT input and output characteristics. When desoldering a resistor, sometimes the lead will still be soldered to the side of the barrel even though EEM328 Electronics Laboratory - Report5 - BJT Amplifiers - Free download as Word Doc (. Its characteristics are otherwise very similar to common diodes. INTRODUCTION: Figure 1 shows the structure of an N-channel JFET. It is a three-terminal unipolar solid- Lab Report 7: MOSFET Characteristics Contents that should be delivered for every report: 1- Netlist code for each experiment showing all components, models and control statements. (If you look at the data An Experiment: Amplfication of an AC signal. 3-FET, Resistors 1kΩ and 200kΩ. EXPERIMENT 6 TRANSISTOR CHARACTERISTICS 6. transistor characteristics experiment lab report